4N35 Optocoupler Phototransistor IC

The 4N35 is a general-purpose optocoupler designed to provide electrical isolation between two circuits. It consists of a gallium arsenide infrared LED and a silicon phototransistor, allowing for efficient signal transfer while maintaining isolation.

Key Features:

• Wide Operating Temperature Range: Suitable for various environments.
• Gallium Arsenide Infrared LED: Emits infrared light to control the phototransistor.
• Silicon Phototransistor: Converts the received infrared light into an electrical signal.
• High Isolation Voltage: Ensures electrical separation between input and output circuits.
• DIP-6 Package: A common package type for discrete semiconductors, providing a standard pinout and mounting configuration.

Specifications:

• Package: DIP-6
• Input Current (If): 10mA 
• Forward Voltage (Vf): 1.5V 
• Output Current (Ic): 50mA 
• Isolation Voltage: 5000VRMS
• Collector-Emitter Saturation Voltage (Vce(sat)): 0.4V 

Applications:

• Motor control
• Signal isolation
• Noise suppression
• Power supply control
• Industrial automation

DATA SHEET AND USECASE

Key Features:

• High Data Rate: Capable of transmitting signals at speeds up to 10 MBd.​
• Low Power Consumption: Designed for efficient operation with minimal power usage.
• Enable Functionality: Includes an enable pin for output control, facilitating strobing applications.​
• Open-Drain Output: Features an open-drain NMOS transistor output, allowing for wired-OR configurations.​
• Common-Mode Rejection (CMR): Offers a CMR of 15 kV/μs, enhancing performance in noisy environments.​
• Electrical Isolation: Provides an isolation voltage of up to 5,300 Vrms, ensuring robust separation between input and output.​