IRF3205PBF N Channel MOSFET Transistor Make INFINEON

The IRF3205PBF is a high-performance N-channel power MOSFET transistor manufactured by Infineon Technologies. It's designed for applications that require high current and voltage handling capabilities, such as power supplies, motor drives, and inverters.   

Key Features: 

• High Current Capability: Handles up to 110A of continuous drain current.   
• Fast Switching Speed: Offers a high switching frequency, enabling efficient power conversion.
• Low On-Resistance: Provides minimal power dissipation when conducting, leading to higher efficiency.   
• High Voltage Rating: Can handle voltages up to 55V, making it suitable for various power applications.  
• TO-220AB Package: A popular package format for power semiconductors, providing good heat dissipation.   

Specifications:

• Package: TO-220AB   
• On-Resistance : 8 milliohms (typical)   
• Input Capacitance : 3000 picofarads
• Drain-Source Breakdown Voltage : 55V
• Gate Charge : 120 nano-Coulombs (typical)

Applications:

• Inverters
• Motor drives
• Power supplies
• Switching regulators
• Industrial control systems

DATA SHEET AND USECASE

Key Features:

• Package Type: TO-220AB
• Gate Charge (Q_g): 146 nC​
• Power Dissipation (P_D): 200W​
• Pulsed Drain Current (I_DM): 390A​
• Drain-to-Source Voltage (V_DSS): 55V​
• Continuous Drain Current (I_D): 110A at 25°C​
• On-Resistance (R_DS(on)): 8 mΩ at V_GS = 10V​