IRF3710-100 V / 57 Amp N-Channel Power MOSFET by IR

The IRF3710-100 is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by International Rectifier (IR). It is a member of the HEXFET family, known for their low on-resistance and fast switching speeds.   

Description:

The IRF3710-100 is a power MOSFET capable of handling high voltages and currents. It is a discrete component packaged in a TO-220 package. The device has a breakdown voltage (Vds) of 100 volts and a continuous drain current (Id) of 57 amps.  

Key Features:

• High power capability: Handles high voltages and currents, making it suitable for applications requiring significant power handling.   
• Low on-resistance: Offers a low resistance when turned on, resulting in efficient power transfer and minimal power dissipation.   
• Fast switching speed: Switches between on and off states quickly, enabling high-frequency operation.   
• Ruggedized design: Built to withstand harsh operating conditions and mechanical stress.   
• TO-220 package: Comes in a widely used TO-220 package, compatible with standard heat sinks and sockets.   

Applications:

• Power supplies: Used in various power supply topologies, including switching power supplies, linear power supplies, and battery chargers.
• Motor control: Drives motors in applications such as robotics, industrial automation, and consumer electronics.
• Audio amplifiers: Used as output transistors in audio amplifiers to deliver high power to speakers.
• Inverters: Employed in inverters to convert DC power to AC power.
• LED drivers: Drives high-power LEDs in lighting applications.

Specifications:

• Vds (breakdown voltage): 100 volts   
• Id (continuous drain current): 57 amps   
• Rds(on) (on-state resistance): 0.048 ohms (typical)
• Input capacitance (Ciss): 3900 pF (typical)
• Switching frequency: Up to 100 kHz
• Operating temperature: -55°C to 150°C
• Package: TO-220