The IRF540NPBF is a high-performance N-channel power MOSFET transistor manufactured by Infineon Technologies. It's designed for applications that require high current and voltage handling capabilities, such as power supplies, motor drives, and inverters.
Key Features:
- High Current Capability: Handles up to 110A of continuous drain current.
- Fast Switching Speed: Offers a high switching frequency, enabling efficient power conversion.
- High Voltage Rating: Can handle voltages up to 55V, making it suitable for various power applications.
- Low On-Resistance: Provides minimal power dissipation when conducting, leading to higher efficiency.
- TO-220AB Package: A popular package format for power semiconductors, providing good heat dissipation.
Specifications:
- Package: TO-220AB
- Input Capacitance (Ciss): 3000 picofarads
- On-Resistance (Rds(on)): 8 milliohms (typical)
- Gate Charge (Qg): 120 nanocoulombs (typical)
- Drain-Source Breakdown Voltage (Vds(off)): 55V
Applications:
- Inverters
- Motor drives
- Power supplies
- Switching regulators
- Industrial control systems
DATA SHEET AND USECASE
Key Features:
- Package Type: TO-220AB
- Power Dissipation: 130 W at 25°C
- Drain-to-Source Voltage (V<sub>DS</sub>): 100 V
- Operating Junction Temperature Range: -55°C to 175°C
- Continuous Drain Current (I<sub>D</sub>): 33 A at 25°C
- On-Resistance (R<sub>DS(on)</sub>): 44 mΩ at V<sub>GS</sub> = 10 V
- Gate Charge (Q<sub>g</sub>): 71 nC at V<sub>GS</sub> = 10 V